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| 110/111RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A FEATURES * High current and high surge ratings * Hermetic ceramic housing * RoHS compliant * Designed and qualified for industrial level TO-209AC (TO-94) RoHS COMPLIANT TYPICAL APPLICATIONS * DC motor controls PRODUCT SUMMARY IT(AV) 110 A * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Typical 50 Hz 60 Hz 50 Hz 60 Hz TEST CONDITIONS VALUES 110 TC 90 172 2080 2180 21.7 19.8 400 to 1200 110 - 40 to 140 UNITS A C A A kA2s V s C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 110/111RKI 80 120 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1300 20 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93692 Revision: 06-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 110/111RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 83 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 110 90 172 2080 2180 1750 Sinusoidal half wave, initial TJ = TJ maximum 1830 21.7 19.8 15.3 14.0 217 0.82 1.02 2.16 1.70 1.57 200 400 kA2s V kA2s A UNITS A C A t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 6 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/s, VR = 50 V, dV/dt = 20 V/s; gate 0 V 25 VALUES 300 1.0 s 110 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 20 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93692 Revision: 06-Jun-08 110/111RKI Series Phase Control Thyristors Vishay High Power Products (Stud Version), 110 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM +VGM -VGM TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp 5 ms TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 140 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 140 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 180 80 40 2.5 1.6 1 6.0 VALUES TYP. 12 3.0 3.0 20 10 120 2 mA V mA MAX. UNITS W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 140 - 40 to 150 0.27 K/W 0.1 15.5 (137) 14 (120) 130 UNITS C N*m (lbf in) g TO-209AC (TO-94) RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.043 0.052 0.066 0.096 0.167 RECTANGULAR CONDUCTION 0.031 0.053 0.071 0.101 0.169 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93692 Revision: 06-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 110/111RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A Maximum Allowable Case Temperature (C) 140 130 120 Conduction Angle Maximum Allowable Case Temperature (C) 140 130 120 Conduction Period 111RKI Series R thJC (DC) = 0.27 K/W 111RKI Series R thJC (DC) = 0.27 K/W 110 100 90 80 70 30 60 90 120 0 20 40 60 180 DC 110 100 90 30 80 0 20 40 60 80 100 12 Average On-state Current (A) 90 60 120 180 80 100 120 140 160 180 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 160 Maximum Average On-state Power Loss (W) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) 111RKI Series TJ = 140C Conduction Angle 180 120 90 60 30 RMS Limit A hS Rt 0. 6 K/ W = 0.3 0. 8 W K/ K/ W 1K /W 1.5 -D e lt a R K/ W 2K /W 4 K/ W 5 K/ W Fig. 3 - On-State Power Loss Characteristics 220 Maximum Average On-state Power Loss (W) 200 180 160 140 120 DC 180 120 90 60 30 0. 6 0.8 100 RMS Limit 80 60 40 20 0 Conduction Period 1K /W 1.5 K/ W 2 K/ W 4 K/ W 5 K/ W R K/ W K/ W th SA = 3 0. W K/ -D ta el R 111RKI Series TJ = 140C 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93692 Revision: 06-Jun-08 110/111RKI Series Phase Control Thyristors Vishay High Power Products (Stud Version), 110 A 2500 Peak Half Sine Wave On-state Current (A) 2000 Peak Half Sine Wave On-state Current (A) 1800 1600 1400 1200 1000 800 1 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial TJ = 140C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 140C No Voltage Reapplied Rated VRRM Reapplied 1500 1000 111RKI Series 500 0.01 0.1 1 10 111RKI Series 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 T = 25C J 1000 TJ = 140C 100 Instantaneous On-state Current (A) 10 111RKI Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 1 Transient Thermal Impedance Z thJC (K/W) Steady State Value R thJC = 0.27 K/W (DC Operation) 0.1 0.01 111RKI Series 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 93692 Revision: 06-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 110/111RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 s, tp=>6s b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms tr<=1 s, tp=>6s (b) Tj=-40 C Tj=25 C (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300s (a) Tj=140 C 1 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: 111RKI Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code 11 1 1 2 3 4 1 2 - RKI 3 120 4 IT(AV) rated average output current (rounded/10) 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) Thyristor Voltage code x 10 = VRRM (see Voltage Ratings table) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95003 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93692 Revision: 06-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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